D. B. Leviton, and Let us note a possible role of, In conclusion, we have used SOI structures with properly chosen BOX and ACT thicknesses to obtain the. Status Solidi B, D. E. Aspnes and A. Woollam, J. Appl. TA01010078 and TH01010419 from the Technology Agency of the Czech Republic. 9. Phys. With the overlayer fixed at 1.45 nm, we have fitted the pair of ellipsometric, V. COMPARISON WITH PREVIOUSLY PUBLISHED RESULTS, Finally, we show the differences between data selected from the literature and our results above the bandgap energy. As noted above, it is also available in a much more convenient Excel spreadsheet. Sol. A. Studna, Phys. Notice, Smithsonian Terms of T = 300 K. (Philipp and Taft). The results by measuring the contact angle on the surface confirmed that the surface of the O2 plasma-treated np-Si layer was hydrophilic. This work was supported by the project “CEITEC– Central European Institute of Technology” (CZ.1.05/1.1.00/02.0068) from the European Regional Development Fund, and Grant Nos. Opt. 16. Bond and grind back silicon-on-insulator (“BGSOI,” we use “SOI” throughout the paper) structure contains a buried thermal oxide (BOX) layer separating the substrate (handle) wafer from the thin (“active,” ACT) Si layer, called the device layer in the semiconductor industry. Energy Mater. We wish to acknowledge M. Lorenc, J. Celý, M. Kučera, and S. Valenda for technical help. L. Válek and The interference pattern observed in SOI samples can easily be understood by considering the field amplitudes after passing through a homogeneous layer of the, The gradual vanishing of the interference effect towards larger, With thinner ACT layers, the interference pattern extends towards higher energies, displaying a reduced number of maxima and minima. D. Redfield, J. Appl. SPIE, C. de Boor, A Practical Guide to Splines (. The data for the above graph is given below. Cells, 4. The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. D. Redfield, J. Appl. 10. In this paper, we propose a new strategy to improve the performance of nanoporous silicon (np-Si) layer-based optical gas sensors. E. Shiles, and This study confirmed that the red-shift can be attributed to the changes in the refractive index induced by the capillary condensation of the … W. A. McGahan, and I am curious, what could cause the increase in reflection from 500nm and what are those 2 peaks. As expected, the differences are significant mainly in the ranges of strong variations of the optical functions, E. In the range above 4 eV shown in detail in Fig. Selecting this option will search the current publication in context. Assessing possible genuine differences of measured samples is beyond the scope of the present study. H. A. Weakliem and To sign up for alerts, please log in first. The latter are sharper, and their positions at lower, The five interference minima above 3 eV allowed us to determine the real part of the. Phys. The latter is covered by an overlayer, as shown in Fig. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in … J. Šik, in Modern Aspects of Bulk Crystal and Thin Film Preparation, edited by N. Kolesnikov and E. Borisenko (, 11. If you need an account, please register here, A number of studies have been devoted to the analysis of reported optical functions of. M. Green, Sol. 8. J. Article copyright remains as specified within the article. W. Karstens, I attached silicon reflection spectrum in 200-1200nm range. M. Inokuti, Phys. B. C. M. Herzinger, For this, we fabricated the np-Si layer on a p+-type silicon substrate and modified the surface wettability of the np-Si layer with oxygen (O2) plasma treatment. E. Shiles, and During the exposure to the organic vapors, there was a reversible red-shift phenomenon in the reflectance spectrum. Phys. Agreement NNX16AC86A, Physica E Low-Dimensional Systems and Nanostructures, Is ADS down? The changes in the reflectance spectra of the hydrophilic-treated np-Si layer were more noticeable than those in the untreated np-Si layer. These experimental results indicate that hydrophilic surface treatment can improve the selectivity and sensitivity of np-Si layer-based gas sensors. W - wavelength a - absorption coefficient M. Inokuti, Phys. Our measurements of extinction using SOI samples covered the 2.25–3.2 eV range; a comparison with selected results from literature is shown in Fig. A. Woollam, J. Appl. J. Šik, in Modern Aspects of Bulk Crystal and Thin Film Preparation, edited by N. Kolesnikov and E. Borisenko (, J. Humlíček, in Handbook of Ellipsometry, edited by H. G. Tompkins and E. A. Irene (, H. R. Philipp, in Handbook of Optical Constants of Solids I, edited by E. D. Palik (, B. J. Frey, SPIE, 15. C. de Boor, A Practical Guide to Splines (. W. Karstens, Use, Smithsonian C. M. Herzinger, P. Y. Yu and T. Yasuda and H. A. Weakliem and T. J. Madison, Proc. 2. Phys. P. Y. Yu and Website © 2020 AIP Publishing LLC. The differences between lineshapes in the E, Thus, at least a part of the observed differences between these datasets can be related to the evaluation of measured data. Status Solidi B, 6. D. E. Aspnes and H. R. Philipp, in Handbook of Optical Constants of Solids I, edited by E. D. Palik (, 13. Selecting this option will search all publications across the Scitation platform, Selecting this option will search all publications for the Publisher/Society in context, The Journal of the Acoustical Society of America, Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon, Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 and 1047 nm, Parameterization of the optical functions of amorphous materials in the interband region, Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation, Refractive index of silicon and germanium and its wavelength and temperature derivatives, https://doi.org/10.1103/PhysRevLett.106.030801, https://doi.org/10.1016/j.solmat.2008.06.009, https://doi.org/10.1016/j.tsf.2014.03.056, https://doi.org/10.1016/0925-3467(92)90015-F, http://www.intechopen.com/books/show/title/modern-aspects-of-bulk-crystal-and-thin-film-preparation. A. D. E. Aspnes, Appl. 18. Rev. A. Studna, Phys.

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